型号:

STB6NK90ZT4

RoHS:无铅 / 符合
制造商:STMicroelectronics描述:MOSFET N-CH 900V 5.8A D2PAK
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
STB6NK90ZT4 PDF
其它有关文件 STB6NK90Z View All Specifications
产品目录绘图 ST Series D2PAK
标准包装 1,000
系列 SuperMESH™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 900V
电流 - 连续漏极(Id) @ 25° C 5.8A
开态Rds(最大)@ Id, Vgs @ 25° C 2 欧姆 @ 2.9A,10V
Id 时的 Vgs(th)(最大) 4.5V @ 100µA
闸电荷(Qg) @ Vgs 60.5nC @ 10V
输入电容 (Ciss) @ Vds 1350pF @ 25V
功率 - 最大 140W
安装类型 表面贴装
封装/外壳 TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装 D2PAK
包装 带卷 (TR)
产品目录页面 1542 (CN2011-ZH PDF)
其它名称 497-6555-2
STB6NK90ZT4-ND
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